Analysis of Schottky Barrier Height in Small Contacts Using a Thermionic-Field Emission Model

Tuning from thermionic emission to ohmic tunnel contacts via doping in Schottky-barrier nanotube transistors.

Electrical power >1 mW is dissipated in semiconducting single-walled carbon nanotube devices in a vacuum. After high-power treatment, devices exhibit lower on currents and intrinsic, ambipolar behavior with near-ideal thermionic emission from Schottky barriers of height one-half the band gap. Upon exposure to air, devices recover p-type behavior, with positive threshold and ohmic contacts. The ...

Investigation of post-annealing effect on efficient ohmic contact to ZnO thin film using Ti/Al metallization strategy

Ohmic and Schottky contacts are playing a major role in the field of ZnO based electronics device fabrication. It is seen that several works have been reported on metallization scheme, contacts with this semiconducting material. But, the thickness of semiconducting material and the choosing of substrate still remain imperfect and inefficient for advanced IC technology. To estimate contact resis...

Schottky contacts on passivated GaAs(1 0 0) surfaces: barrier height and reactivity

We present results on the experimental and theoretical investigations of metal contacts on chalcogen passivated GaAs(1 0 0) surfaces. Photoemission spectroscopy investigations show that depending on the metal used for the contact formation the chalcogen passivation reduces the interaction between metals and GaAs(1 0 0). For Sb no chemical reaction at all with the substrate surface is found, whi...

Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes

Modeling a Schottky-barrier carbon nanotube field-effect transistor with ferromagnetic contacts

In this study, a model of a Schottky-barrier carbon nanotube fieldeffect transistor (CNT-FET), with ferromagnetic contacts, has been developed. The emphasis is put on analysis of current-voltage characteristics as well as shot (and thermal) noise. The method is based on the tight-binding model and the nonequilibrium Green’s function technique. The calculations show that, at room temperature, th...